maximum ratings(t j =125 c unless otherwise noted ) rating symbol value unit reverse voltage v r 30 volts forward power dissipation p f @ta=25 c 280 200 mw derate above 25 c 2.8 2.0 mw/ c operating junction t j c temperature range ?55 to +125 storage t emperature range t stg ?55 to +150 c device marking lmbd301 l t1g= 4t electrical characteristics(t a =25 c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage(i r =10 a) v (br)r 30 ? ? volts total capacitance(v r =15v,f=1.0mhz,)figure1 c t ? 0.9 1.5 pf reverse leakage(v r =25v)figure3 i r ? 13 200 n adc forward voltage(if=1.0madc)figure4 v f ? 0.38 0.45 vdc forward voltage(if=10madc)figure4 v f ? 0.52 0.6 vdc note:lmbd301 l t 1g is also available in bulk packaging.use LMBD301LT1G as the device title to order this device in bulk. silicon hot?carrier diodes schottky barrier diodes 3 cathode 1 anode these devices are designed primarily for high?efficiency uhf and vhf detector applications.they are readily adaptable to many other fast switching rf and digital applications.they are supplied in an inexpensive plastic package for low?cost, high?volume consumer and industrial/commercial requirements.they are also available in a surface mount package. ? extremely low minority carrier lifetime ?15ps(typ) very low capacitance ?1.5pf(max)@v r =15v low reverse leakage ?i r =13 nadc( t yp) lmbd301 1 3 2 sot?23 LMBD301LT1G leshan radio company, ltd. ordering information device marking shipping LMBD301LT1G 4t 3000/tape&reel lmbd301lt3g 4t 10000/tape&reel we declare that the material of product compliance with rohs requirements. rev.o 1/3
LMBD301LT1G i f , forward current (ma) i r , reverse leakage ( a) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 24 27 30 500 400 300 200 100 0 0 102030 40506070 8090100 10 1.0 0.1 0.01 0.001 0 6.0 12 18 24 30 100 10 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 typical electrical characteristics v r , reverse voltage (volts) figure 1. total capacitance i f , forward current (ma) figure 2. minority carrier lifetime v r , reverse voltage (volts) figure 3. reverse leakage v f , forward voltage (volts) figure 4. forward voltage c t , total capacitance (pf) , minority carrier lifetime (ps) f =1.0mhz t a = ?40c t a = 85c t a = 25c krakauer method t a = 100c 75c 25c sinusoidal generator ballast network (pads) sampling oscilloscope (50 ? input) pads capacitive conduction forward conduction storage conduction dut i f(peak) i r(peak) figure 5. krakauer method of measuring lifetime leshan radio company, ltd. rev.o 2/3
d j k l a c b s h g v 1 2 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 n o t es : 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. i nch es m i ll i m e t e r s d i m m i n m a x m i n m a x a 0 . 1102 0 . 1197 2 . 80 3 . 04 b 0 . 0472 0 . 0551 1 . 20 1 . 40 c 0 . 0350 0 . 0440 0 . 89 1 . 11 d 0 . 0150 0 . 0200 0 . 37 0 . 50 g 0 . 0701 0 . 0807 1 . 78 2 . 04 h 0 . 0005 0 . 0040 0 . 013 0 . 100 j 0 . 0034 0 . 0070 0 . 085 0 . 177 k 0 . 0 1 4 0 0 . 0 2 85 0 . 35 0 . 6 9 l 0 . 0 350 0 . 0 401 0 . 89 1 . 02 s 0 . 0 830 0 . 1 039 2 . 10 2 . 64 v 0 . 0177 0 . 0236 0 . 45 0 . 60 p i n 1 . anode 2 . no connection 3 . cathode 0.03 1 0. 8 sot-23 3 LMBD301LT1G leshan radio company, ltd. rev.o 3/3
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